NaCl-KCl-NaF-SiO_2熔盐体系电沉积渗硅的研究  

Study of Electrodeposit Ihrigizing in NaCl-KCl-NaF-SiO_2 Molten Salt

作　　者：何小凤[1] 李运刚[1] 李智慧[1] 

机构地区：[1]河北联合大学,河北唐山063009

出　　处：《有色金属（冶炼部分）》2014年第11期21-27,56,共8页Nonferrous Metals（Extractive Metallurgy)

基　　金：国家自然科学基金资助项目(50474079)

摘　　要：在KCl-NaCl-NaF-（SiO2）熔盐体系中,以钼为基体,以电沉积法得到的硅为硅源,在电沉积硅的同时进行渗硅,成功制备了Mo-MoSi2梯度材料。考察了电沉积给电方式、电流密度、温度、时间和脉冲形式对沉积扩散层表面形貌、相结构、断面厚度以及硅含量分布的影响。结果表明,脉冲给电比直流给电的沉积效果好。合适的脉冲沉积参数为：电流密度750-1 000A/cm2、温度800-850℃、t1/t2=0.7-1.5、沉积时间120-180min。Mo-MoSi2 gradient material was prepared by ihrigizing on molybdenum matrix with silicon electrodeposited in KCl-NaCl-NaF-（SiO2）molten salt as silicon source.The effects of electroplating mode,current density,temperature,electrolytic deposition time and pulse form on surface microstructure,phase structure,and depth and silicon content distribution of cross section of coating were investigated.The results show that the coating quality electrodeposited by pulse form is better than that by direct current.The optimum pulse deposition parameters include current density of 750~1000 A/cm2,temperature of800~850 ℃,t1=t2=0.7~1.5,and electroplating duration of 120~180min.

关 键 词：NaCl-KCl-NaF-SiO2熔盐体系 电沉积 SI Mo-MoSi2梯度材料 

分 类 号：TF111.522[冶金工程—冶金物理化学]