宽带限幅低噪声放大器设计  

Design of a Wide Band Limited Low Noise Amplifier

作　　者：聂星河 郁健[1] 程冰[1] 於晓峰[1] 

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2014年第5期445-449,共5页Research & Progress of SSE

摘　　要：设计并制作了一款L-S波段宽带限幅低噪声放大器。测试结果表明,该放大器在1-3GHz工作频带内最大噪声系数NF≤1.4dB,增益≥29dB,带内增益平坦度≤±0.6dB,输入输出驻波比≤1.5,在大功率占空比为10%、脉冲功率100W下正常工作。经过验证该放大器工作性能良好可靠。In this paper,an L-S band limited low noise amplifier（LNA）is designed and fabricated.The test results show that：within the bandwidth of 1~3GHz,the designed limited LNA has a noise figure below 1.4dB,and the small signal gain higher than 29 dB with flatness below±0.6dB.The limited LNA achieves input and output VSWRbelow 1.5,and can work in 100 W pulse power with a duty ratio of 10%.The proposed limited LNA is verified to have great performance and reliability.

关 键 词：低噪放 限幅器 宽带 PIN二极管 小型化 

分 类 号：TN722.3[电子电信—电路与系统]