基体放置状态与脉冲偏压幅值对大颗粒形貌和分布的影响  

Reduction of Macro-Particle Density on Surfaces of TiN Coatings Grown by Pulsed-Bias Arc Ion Plating

作　　者：魏永强[1,2,3] 魏永辉[1,2] 蒋志强[1,2] 田修波[3] 

机构地区：[1]郑州航空工业管理学院机电工程学院,郑州450015 [2]航空制造及装备河南省高校工程技术研究中心,郑州450015 [3]哈尔滨工业大学先进焊接与连接国家重点实验室,哈尔滨150001

出　　处：《真空科学与技术学报》2014年第10期1012-1018,共7页Chinese Journal of Vacuum Science and Technology

基　　金：国家科学基金资助项目(51401182);航空科学基金项目(2012ZE55011);河南省科技厅基础与前沿技术研究计划项目(132300410241);科技攻关计划(142102210504)

摘　　要：利用电弧离子镀方法制备了TiN薄膜,研究了脉冲偏压幅值和试样放置状态对Ti大颗粒形貌和分布规律的影响。采用扫描电子显微镜观察了薄膜的表面形貌,利用Image J科学图像软件对Ti大颗粒的数目和尺寸进行了分析。结果表明:在不施加脉冲偏压时,随着试样表面与靶表面放置方向从平行到垂直,大颗粒数目迅速由4964降低到3032,所占薄膜的面积比从12.1%减少到4.7%;而在相同的放置方向下,发现静止状态下的薄膜表面大颗粒数目较少,尺寸也较小,而转动状态下大颗粒形貌差别较大,尺寸和所占的面积比较大。随着脉冲偏压幅值的增加,在各个放置状态下大颗粒都出现了先减小后增加的趋势,当幅值在-400 V时,薄膜表面大颗粒所占的面积比都达到最小值。Here, we addressed reduction of density of macro-particles （MPs） on the surfaces of TiN coatings synthe- sized by pulsed-bias arc ion plating. The influence of the deposition conditions, including the target-substmte alignment, rotation of substrate, and pulsed bias, on density and distribution of MPs were investigated. The MPs＇ microstructures were characterized with scanning electron microscopy. We concluded： first, when unbiased, the perpendicular target-substrate alignment resulted in smaller number and area fraction of MPs than the parallel alignment; second, while the arc current increased from 80 to 90 A, aligned perpendicularly to the target and biased at identical voltage, a rotating-substrate had higher MP-formation probability than a static-one did; besides, a rotating substrate produced bigger irregularly-shaped MPs and larger MP area fraction; and finally, as the pulsed bias increased from - 500 to - 600 V, the area fraction of MPs increased, possibly because MP formation outpaced film growth due to stronger ion sputtering and lower deposition rate. The lowest MPs＇ area fraction was obtained at a bias of -400 V.

关 键 词：电弧离子镀 TIN 大颗粒 脉冲偏压幅值 放置状态 

分 类 号：TB383.2[一般工业技术—材料科学与工程] TB302.1