基于高输入阻抗放大器的EEG传感器设计  

EEG sensor design based on amplifier of high input impedance

作　　者：张伟林[1] 

机构地区：[1]浙江大学超大规模电路设计研究所,浙江杭州310027

出　　处：《传感器与微系统》2014年第11期82-85,共4页Transducer and Microsystem Technologies

摘　　要：脑电(头皮脑电)图(EEG)是医疗上重要的诊断信息,目前非接触式干电极在采集EEG信号时具有使用简单、不易受环境约束的优点,具有着广阔的应用前景,已经成为全世界的热门研究课题。由于人体皮肤具有很高的阻抗,故要求非接触式干电极具有高输入阻抗。为了提高输入阻抗,采用深度电压串联负反馈来实现超高输入阻抗放大电路,并给出电路的设计和分析。深度电压串联负反馈的前置放大器能提供高达2.6×1011Ω的输入阻抗,有助于非接触式干电极进行信号的采集。Electroencephalogram（EEG） is an important diagnostic medical information, currently non-contact dry electrode has advantages of simple to use and less susceptible to environmental constraints in acquisition of EEG signals, thus it has broad application prospects, and has become a hot research topic worldwide. Because human skin has high impedance, thus require non-contact dry electrode has high input impedance. In order to increase input impedance, use depth of series of negative feedback voltage to achieve amplifier circuit of ultra-high input impedance, and give design and analysis of circuit. Depth voltage series negative feedback preamplifier can provide up 2.6 × 1011Ω input impedance, which helps non-contact dry electrodes for signal acquisition.

关 键 词：脑电图 非接触式干电极 高输入阻抗放大器 传感器 

分 类 号：TP212.3[自动化与计算机技术—检测技术与自动化装置]