温度对CVD制备Ti-Si-C涂层中Ti_3SiC_2形成规律的影响  

Effect of temperature on the formation law of Ti_3SiC_2 in CVD prepared Ti-Si-C codeposited coating

作　　者：杨钢宜 李国栋[1] 熊翔[1] 王雅雷[1] 王骏[1] 

机构地区：[1]中南大学粉末冶金国家重点实验室,长沙410083

出　　处：《粉末冶金材料科学与工程》2014年第5期797-804,共8页Materials Science and Engineering of Powder Metallurgy

基　　金：国家重点基础研究发展计划资助项目(2011CB605805);国家自然科学基金创新群体基金项目(51021063)

摘　　要：采用TiCl4-CH3SiCl3-H2-Ar反应体系，低压化学气相共沉积（LPCVD）Ti-Si-C三元体系涂层。采用XRD、SEM、EDS和EPMA分析在1100~1250℃不同温度下制备的涂层物相组成和形貌结构。结果表明：1100℃时形成TiC涂层，无Ti3SiC2相；1150~1250℃时形成TiC与Ti3SiC2复合涂层。当沉积温度为1200℃时，Ti3SiC2晶粒沿×104？方向择优生长，而在1150℃和1250℃沉积时，择优取向不明显。1150℃时涂层为多孔细柱和颗粒堆积嵌合结构，当温度为1200~1250℃时，涂层分为两层，内层过渡层为柱状晶结构，主要成分为TiC；外层为TiC相与Ti3SiC2相复合的板条错堆状结构。Taking the reactive system of TiCl4-CH3SiCl3-H2-Ar, the Ti-Si-C ternary coating was obtained by LPCVD. The changes of phase composition, morphology and structure of the coating made at 1 100~1 250℃, were examined by X-ray diffraction, SEM, EDS and EPMA. The results show that the coating of TiC is formed at 1 100℃without Ti3SiC2 while between 1 150℃and 1 250℃the coating is mainly composed of TiC and Ti3SiC2. The grain preferred orientation of Ti3SiC2 is along the×104？crystal plane at 1 200℃while grows irregularly at 1 150℃and 1 250℃. The coating has the structure of the porous fine column and particle accumulated and fitted together at 1 150℃. When the temperature is between 1 200℃and 1 250℃, the coating is divided into two layers, and the inner transition layer of columnar crystal sructure is mainly composed of TiC, while the outer layer is composited of the phase of TiC and Ti3SiC2 and has the layer staggerly stacked structure.

关 键 词：化学气相沉积 Ti—Si-C TI3SIC2 共沉积 温度 

分 类 号：TB332[一般工业技术—材料科学与工程]