电离辐射环境下金属-铁电-绝缘体-基底结构铁电场效应晶体管电学性能的模拟  

Computer simulation of electric properties of metal-ferroelectric-substrate structured ferroelectric field effect transistor under ionizing radiation

作　　者：吴传禄 马颖[1,2] 蒋丽梅[1] 周益春[1,2] 李建成[3] 

机构地区：[1]湘潭大学材料科学与工程学院,湘潭411105 [2]低维材料及其应用技术教育部重点实验室,湘潭411105 [3]国防科技大学电子科学与工程学院,长沙410073

出　　处：《物理学报》2014年第21期300-306,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:11172257;61176093)资助的课题~~

摘　　要：本文利用改进的米勒模型模拟了金属-铁电-绝缘体-基底结构铁电场效应晶体管在电离辐射环境下的铁电薄膜极化、界面电荷密度和电荷迁移率,最终得出在不同辐射总剂量和辐射剂量率下,铁电场效应晶体管的电容和漏源电流曲线.计算结果表明,总剂量为10 Mrad时,对铁电场效应晶体管的漏源电流和电容影响甚微;总剂量为100 Mrad(1 rad=10-2Gy)时,对其有很明显的影响.当辐射的剂量率发生变化时,铁电场效应晶体管的电流和电容也会发生改变.模拟结果表明,铁电场效应晶体管有较强的抗辐射能力.This article uses the Miller model to simulate the ferroelectric polarization of the metal-ferroelectrics-insulatorsubstrate（MFIS） structured ferroelectric field effect transistor（FeFET）, interfacial charge concentration, and charge migration rate under ionizing radiation. The capacitance and source-drain current at different total dose and different dose rate are calculated. Results show that the total dose of 0.1 MGy changes slightly the source leakage current and capacitance of the FeFET, and the total dose of 1 MGy leads to a larger variation in these quantities. When the radiation dose rate is varied, the minimal changes in the drain-source current and capacitance are observed. These results suggest that FeFET has a relatively large radiation hardness.

关 键 词：总剂量 剂量率 电容 漏源电流 

分 类 号：TN386[电子电信—物理电子学]