Radio-frequency transistors from millimeter-scale graphene domains  

作　　者：魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴 

机构地区：[1]Institute of Microelectronics, Peking University [2]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China [3]School of Physics, Peking University

出　　处：《Chinese Physics B》2014年第11期470-475,共6页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant Nos.2011CBA00600,2011CBA00601,and 2013CBA01604);the National Natural Science Foundation of China(Grant No.60625403);the National Science and Technology Major Project of China(Grant No.2011ZX02707)

摘　　要：Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.

关 键 词：millimeter-scale graphene domain radio-frequency transistor cut-off frequency maximum oscil-lation frequency 

分 类 号：TN32[电子电信—物理电子学]