Resistive switching characteristics of Ti/ZrO_2/Pt RRAM device  

作　　者：雷晓艺 刘红侠 高海霞 杨哈妮 王国明 龙世兵 马晓华 刘明 

机构地区：[1]Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University [2]School of Advanced Materials and Nanotechnology, Xidian University [3]Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics,Chinese Academy of Sciences [4]Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology

出　　处：《Chinese Physics B》2014年第11期507-511,共5页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2011CBA00606);the National Natural Science Foundation of China(Grant Nos.61106106,11304237,61376099,and 11235008);the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant Nos.20130203130002 and 20110203110012)

摘　　要：In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.

关 键 词：resistive random access memory （RRAM） resistive switching （RS） conductive filament （CF） compliance current 

分 类 号：TM564[电气工程—电器]