Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation  

作　　者：肖尧 郭红霞 张凤祁 赵雯 王燕萍 张科营 丁李利 范雪 罗尹虹 王园明 

机构地区：[1]State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology [2]Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences [3]State Key Laboratory of Electronic Thin Films and Integrated Devices

出　　处：《Chinese Physics B》2014年第11期612-615,共4页中国物理B（英文版）

基　　金：supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices,China(Grant No.KFJJ201306)

摘　　要：Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.Synergistic effects of the total ionizing dose （TID） on the single event upset （SEU） sensitivity in static random access memories （SRAMs） were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed.

关 键 词：single event upset total dose static random access memory imprint effect 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] O613.71[自动化与计算机技术—计算机科学与技术]