中频带通ΣΔ调制器的建模与仿真设计  

Non-idealities modeling, simulation and design of IF bandpass ΣΔ modulator

作　　者：郭红转[1] 杨艳燕[1] 

机构地区：[1]南阳理工学院计算机与信息工程学院,河南南阳473004

出　　处：《电子技术应用》2014年第11期39-42,共4页Application of Electronic Technique

摘　　要：中频带通sigma-delta(ΣΔ)调制器是数字中频接收机的核心模块。基于一个双采样技术的低失真四阶带通sigma-delta调制器,分析了其主要的非理想特性,并建立了模型。利用根轨迹法对该调制器进行了稳定性研究,同时在TSMC 0.18μm的工艺下给出了该调制器的电路图以及版图的后仿真结果。后仿真结果显示了建立模型的准确性,证明该模型可以有效指导后级电路设计。The intermediate frequency（IF） bandpass sigma-delta（ΣA） modulator is the kernel of digital IF receiver.In this paper,the main non-idealities of a low-distortion fourth-order bandpass Σ△ modulator based on the double-sampling technique are analyzec and modeled.Root locus is applied to research the stability of the modulator,and the circuit and layout of the modulator are presented in TSMC 0.18 μm process.The post-simulation results are also given,which indicate the veracity of the modeling and prove that the model can serve as a guide for the circuit design effectively.

关 键 词：中频 带通∑△调制器 非理想特性 建模 

分 类 号：TN79[电子电信—电路与系统]