Er:GaN微纳米晶发光性能研究  

Investigation on Luminescent Properties of Er:GaN Micro-Nano Crystals

作　　者：高崴崴[1] 王晓丹[1] 韩佰祥[2] 莫亚娟 曾雄辉[2] 徐科[2] 

机构地区：[1]苏州科技学院物理科学与技术系,苏州215009 [2]中国科学院苏州纳米技术与纳米仿生研究所,苏州215123

出　　处：《人工晶体学报》2014年第9期2270-2275,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61306004;51002179;11247023;51272270);江苏省自然科学基金(BK20130263);中国科学院功能开发项目(yg2012093)

摘　　要：采用溶液化学方法制备了Er3+掺杂浓度为1at%的Er∶GaN微纳米晶材料。对退火前后材料的结构、形貌和发光性能进行了表征。结果表明:Er∶GaN微纳米晶样品为纯的六方GaN相。退火后出现晶粒长大现象,且氧含量降低,微纳米晶的结晶质量变好。退火处理后出现了Er3+相关的524 nm和547 nm的绿光峰,660 nm的红光峰。在980 nm激发下,在Yb,Er∶GaN微纳米晶样品中实现了上转换荧光发射,并观察到了和Er∶GaN微纳米晶相同的发光峰。Er： GaN micro-nano crystal doped with 1.0at% Er^3＋ was prepared using solution chemistry method.Structure,morphology and spectrum luminiscent properties of the material before and after annealing were characterized.All results indicated that Er ： GaN micro-nano crystal had wurtzite structure.After annealing,the size of crystal granule grew bigger,and showed lower oxygen content and better crystallinity.The sample showed strong green emission peaks at 524 nm and 547 nm,and 660 nm red emission peak related with Er ions.Under 980 nm excitation,Yb,up-conversion emission was observed in the Yb,Er： GaN micro-nano crystal and the emission peaks were the same with the emission peaks observed in Er： GaN micro-nano crystal.

关 键 词：Er:GaN 微纳米晶 发光性能 

分 类 号：TN304[电子电信—物理电子学]