IGBT模块中续流二极管关断过程失效机理分析  

Analysis of Turn-off Failure Mechanism for the Freewheeling Diode in IGBT Module

作　　者：李世平[1] 奉琴 陈彦[1] 万超群[1] 宋自珍 

机构地区：[1]株洲南车时代电气股份有限公司,湖南株洲412001

出　　处：《大功率变流技术》2014年第5期28-32,共5页HIGH POWER CONVERTER TECHNOLOGY

摘　　要：鉴于IGBT模块中的续流二极管在关断过程中会发生瞬变,文章从二极管的设计准则出发,研究续流二极管发生失效的机理,并结合一个IGBT模块中二极管失效的具体案例进行分析,给出了二极管失效的几种原因,并提出了避免其失效的几种方法。In IGBT modules, freewheeling diodes experience instant change in its turn-off process. Based on the design rules of diodes, failure mechanism of freewheeling diodes was analyzed combined with a concrete failed case, and several failure mechanisms were proposed. Several solutions were introduced to avoid the failures.

关 键 词：IGBT模块 续流二极管 反向恢复电流 热击穿 电压击穿 

分 类 号：TN31[电子电信—物理电子学]