垂直结构LED和倒装结构LED的发光特性研究  

Optical Characterization of Light-Emitting Diodes Fabricated with Vertical and Flip-Chip Structure

作　　者：李杨[1] 董素素[2] 王艺燃[2] 王凤超[2] 邹军[2] 

机构地区：[1]上海应用技术学院材料与工程学院,上海201418 [2]上海应用技术学院理学院,上海201418

出　　处：《光电技术应用》2014年第5期47-51,共5页Electro-Optic Technology Application

基　　金：国家自然科学基金青年基金(51302171);上海联盟计划(Lm201318)

摘　　要：研究了1.16 mm GaN基蓝光芯片的垂直封装结构LED和倒装封装结构LED在驱动电流达到和超过工作电流350mA的发光特性和变化趋势。随着驱动电流的逐渐增大,与垂直结构LED相比,倒装结构LED光通量的饱和电流值增加350mA,在1 200 mA电流时的光通量高出25.9%,色温的异常电流值增加了400 mA,发光效率平均提高8l m/W。实验结果表明,倒装结构LED具有更高的抗大电流冲击稳定性和光输出性能,可有效提高LED在实际应用中使用寿命。When driving current is or more than 350 mA operation current, the optical characterization and variation trend of vertical and flip-chip structure light-emitting chip （LED） of 1.16 mm GaN-based blue light chip are researched. With the increasing of the driving current value, comparing with that of vertical structure LED, the luminous flux saturation current value of flip-chip structure LED is increased 350 mA. At the condition of 1 200 mA current value, the luminous flux value is more than 25.9%, the abnormal current value of color temperature is increased 400 mA and luminous efficiency is increased 81 m/W in average. Experimental results show that flip-chip structure LED has better anti-impulse stability from high power current and optical output characterization. And the operation life of LED in application is improved effectively.

关 键 词：垂直结构LED 倒装LED 光通量 发光效率 色温 

分 类 号：TN383.1[电子电信—物理电子学]