固结磨料研磨SiC单晶基片(0001)C面研究  

Study on Fixed Abrasive Lapping Si C Single Crystal Substrate( 0001) C Surface

作　　者：苏建修[1] 张学铭[1] 万秀颖[1] 付素芳[1] 

机构地区：[1]河南科技学院机电学院,新乡453003

出　　处：《纳米技术与精密工程》2014年第6期417-423,共7页Nanotechnology and Precision Engineering

基　　金：国家自然科学基金资助项目(51075125;51375149)

摘　　要：碳化硅(SiC)单晶基片已广泛应用于微电子、光电子等领域.本文针对传统游离磨料研磨加工的缺点,提出了固结磨料研磨SiC单晶基片技术,以前期研究的SiC单晶基片研磨膏配方,试制了一系列固结磨料研磨盘,研究了固结磨料研磨SiC单晶基片(0001)C面时的材料去除率、表面粗糙度及平面度,并与游离磨料研磨进行了对比.结果表明,固结磨料研磨后样品表面有深度较浅的划痕,游离磨料研磨后表面没有划痕,但表面呈凹坑状;游离磨料研磨后工件表面粗糙度轮廓最大高度Rz远大于固结磨料研磨;固结磨料研磨的材料去除率高于游离磨料,固结磨料研磨后的表面粗糙度Ra远低于游离磨料研磨,固结磨料研磨可提高平面度;研究结果可为进一步研究固结磨料化学机械研磨盘、固结磨料研磨工艺参数及机理提供参考依据.The silicon carbide（SiC） single crystal substrate has been widely used in microelectronic and optoelectronic devices. In this paper,based on former research on the abrasive paste ingredients in lapping Si C single crystal substrate,a series of fixed abrasive（ FA） lapping platens were developed. The material removal rate（ MRR）,the surface roughness and the surface flatness were studied in lapping Si C single crystal substrate（ 0001） C surface with two methods of FA lapping and free abrasive lapping. The research results show that there are some scratches with shallow depth on the sample surface after FA lapping,while there are many pits on the sample surface without scratches after free abrasive lapping. The maximum height（Rz） of surface roughness after free abrasive lapping is much larger than that of FA lapping. The MRR and surface flatness of FA lapping are higher than those of free abrasive lapping,and the surface roughness（Ra） of the FA lapping is much lower than that of free abrasive lapping. The research results can provide reference for further study on the process parameters and material removal mechanism in FA lapping of Si C single crystal substrate.

关 键 词：固结磨料研磨 SiC单晶基片 材料去除率 表面粗糙度 平面度 

分 类 号：TN305.2[电子电信—物理电子学]