带有模式扩展层的小发散角激光器模拟研究  

Study on Simulation of the Small Far Field Divergence Semiconductor Lasers with Mode Expansion Layers

作　　者：戴银[1] 李林[1] 苑汇帛 乔忠良[1] 谷雷[1] 刘洋[1] 李特[1] 曲轶[1] 

机构地区：[1]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022

出　　处：《中国激光》2014年第11期23-29,共7页Chinese Journal of Lasers

基　　金：国家自然科学基金(60976038;61107054;61308051;61370043);国家自然科学基金委员会和中国工程物理研究院联合基金(U1330136);吉林省科技发展计划(20100419);高功率半导体激光国家重点实验室基金(C1301)

摘　　要：模拟了带有模式扩展层的半导体激光器,研究了中心波导层、扩展波导层和内限制层对激光器性能的影响。经过优化获得了一个条宽为50μm,远场发散角为23°,阈值电流为117.8mA,限制因子为2.37%的激光器。远场发散角最小可达到18°,此时阈值电流为200.9mA。与普通结构比较,优化后的结构远场垂直发散角减小了20°左右,阈值电流并没有明显增加,模拟计算表明模式扩展层没有降低激光器的电学和温度稳定特性。The impact of center waveguide layers,mode expansion layers and confinement layers on semiconductor laser performance with mode expansion layers has been investigated using the crosslight software.A structure with stripe width of 50μmand far field divergence angle of 23°is obtained,whose threshold current is 117.8 mA and confinement factor is 2.37%.The far field divergence angle can be as low as 18°when the threshold current is200.9 mA.After optimization the far field vertical divergence angle is reduced by about 20°without obvious threshold current increas.The results show that the mode expansion layers do not reduce the electrical properties and the temperature stability characteristics of lasers.

关 键 词：半导体激光器 模式扩展层 垂直发散角 阈值电流 

分 类 号：TN248.4[电子电信—物理电子学]