高峰值功率微片激光器及其在LIBS中的应用  

High Peak Power Microchip Laser and its LIBS Application

作　　者：邓奔 王杰[1] 姜培培[1] 吴波[1] 沈永行[1] 

机构地区：[1]浙江大学光电信息工程学系现代光学仪器国家重点实验室,浙江杭州310027

出　　处：《中国激光》2014年第11期30-35,共6页Chinese Journal of Lasers

基　　金：国家863计划(2009AA063006)

摘　　要：利用Nd3+:YAG/Cr4+:YAG键合晶体分别研究了被动调Q的单体和半外腔结构激光器的高峰值功率短脉冲激光特性,发现半外腔结构的被动调Q激光器具有产生脉冲宽度小于1ns、单脉冲能量达1mJ、峰值功率超过1 MW的潜力,远远优于单体激光器可以获得的单脉冲激光能量和激光峰值功率。利用所研制的半外腔结构被动调Q激光器,并结合自行研制的高分辨率光纤光谱仪,开展了激光诱导击穿光谱(LIBS)技术研究,针对标准铁合金样品和溶液中的Pb重金属离子,得到了较好的定性分析结果和定量关系曲线。The short pulse laser characteristics of Nd3＋：YAG/Cr4＋：YAG diffuse-bonded single piece and the semiexternal cavity passively Q-switched lasers are investigated respectively.It is found that the semi-external cavity structured passively Q-switched laser can emit laser pulses with pulse duration less than 1 ns,single pulse energy greater than 1 mJ and peak power higher than 1 MW,much better than the performance of the single piece laser.Using the developed laser and a home-made high resolution fiber spectrometer,a compact LIBS system is set up.The performance of the LIBS system is evaluated in the cases of standard iron alloy samples and the Pb contained liquid samples.Qualitative analysis result and quantitative relationship curve are obtained.

关 键 词：激光器 高峰值功率 光纤光谱仪 激光诱导击穿光谱 

分 类 号：TN249[电子电信—物理电子学]