C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate  

作　　者：李祚涵 彭继迎 郑义 杨野 寇晋华 

机构地区：[1]Institute of Laser, School of Science, Beijing Jiaotong University [2]Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University

出　　处：《Optoelectronics Letters》2014年第6期423-426,共4页光电子快报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61108021);the Beijing Natural Science Foundation(No.4102048);the Fundamental Research Funds for the Central Universities(No.2013JBM091)

摘　　要：In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr4+:YAG. Two crystals of Nd3+:YVO4 and Nd3+:Gd VO4 are adopted to generate laser, respectively. With the incident pump power of 13 W, the average output powers of 678 m W and 852 m W at 1.17 μm are obtained with the durations of Q-switched envelope of 1.8 ns and 2 ns, respectively. The mode-locked repetition rates are as high as 2.3 Hz and 2.2 GHz, respectively. As far as we know, the Q-switched envelope is the narrowest and the mode-locked repetition rate is the highest at present in this field. In addition, yellow laser output is also achieved by using the Li B3O5 frequency doubling crystal.

关 键 词：Frequency doublers Locks (fasteners) Q switching 

分 类 号：TN248[电子电信—物理电子学] TN248.1