A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET  

作　　者：Shiromani Balmukund Rahi Bahniman Ghosh Pranav Asthana 

机构地区：[1]Department of Electrical Engineering,Indian Institute of Technology Kanpur [2]Microelectronics Research Center,10100,Burnet Road,Bldg.160,University of Texas at Austin

出　　处：《Journal of Semiconductors》2014年第11期59-63,共5页半导体学报（英文版）

摘　　要：We propose a heterostructure junctionless tunnel field effect transistor （HJL-TFET） using AIGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates （named gate, gatel ） with two different work functions （gate = 4.2 eV, gatel = 5.2 eV respectively）. The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10^-6 A/μm, the off current remains as low as 9.1 × 10^-14 A/μm. So /ON/OFF ratio of 10^8 is achieved. Point subthreshold swing has also been reduced to a value of 41 mV/decade for TiO2 gate material.We propose a heterostructure junctionless tunnel field effect transistor （HJL-TFET） using AIGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates （named gate, gatel ） with two different work functions （gate = 4.2 eV, gatel = 5.2 eV respectively）. The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10^-6 A/μm, the off current remains as low as 9.1 × 10^-14 A/μm. So /ON/OFF ratio of 10^8 is achieved. Point subthreshold swing has also been reduced to a value of 41 mV/decade for TiO2 gate material.

关 键 词：band-to-band tunneling （BTBT） TFET heterostructure junctionless tunnel field effect transistor （HJL-TFET） ION/ION/IOFF ratio subthreshold slope VLSI 

分 类 号：TN386[电子电信—物理电子学]