Experimental demonstration of the three-phase-shifted DFB semiconductor laser with buried heterostructure using common holographic exposure  

作　　者：LU LinLin CAO BaoLi ZHANG LiBo TANG Song LI LianYan LI SiMin SHI YueChun CHEN XiangFei 

机构地区：[1]National Laboratory of Microstructures & School of Engineering and Applied Sciences, Nanjing University

出　　处：《Science China(Technological Sciences)》2014年第11期2231-2235,共5页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.61090392);the National Hi-Tech Research and Development Program of China("863"Project)(Grant No.2011AA010300);the Key Programs of the Ministry of Education of China(Grant No.20100091110005)

摘　　要：In this article, we report the first experimental demonstration of the three-phase-shifted （3PS） DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp （REC） technique. The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser. Compared with the quarter-wave-phase shift （QWS） DFB semiconductor laser, the 3PS DFB semiconductor laser shows better single-longitude-mode （SLM） property even at high injection current with high temperature. However, it only changes the ~un-level sampling structures but the seed grating is uniform using the REC tech- nique. Therefore, its fabrication cost is low.

关 键 词：three-phase-shifted structure DFB semiconductor laser Reconstruction-Equivalent-Chirp （REC） technique 

分 类 号：TN248.4[电子电信—物理电子学] TN248