一种可控静电双阱电场分布的计算与相关分析  

Calculation of electrostatic field distribution and analysis of the controllable electrostatic double-well

作　　者：许雪艳[1] 陈海波[1] 马慧[1] 

机构地区：[1]巢湖学院电子工程与电气自动化学院,安徽巢湖238000

出　　处：《量子电子学报》2014年第6期740-745,共6页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金(11472063);安徽省高校省级自然科学重点研究项目(KJ2012Z271);安徽省高校省级自然科学研究项目(KJ2013Z227)

摘　　要：给出了可控制静电双阱方案的静电场分布与几何参数的关系及囚禁中心位置与系统参数的依赖关系并作相关分析。研究表明,可通过改变方案的系统参数改变囚禁中心的位置、囚禁势阱的深度及势阱的体积,从而实现囚禁经过Stark减速器得到的冷分子,甚至通过选择合适的系统参数实现温度更高的冷分子囚禁。The relationship between the electrostatic field distribution and geometric parameters on the controllable electrostatic double-well was calculated and analyzed. The dependent relationship between the trapped central position and system parameters was also calculated and analyzed. The results show that position of the trapped center and. depth of the trapped well can be changed by changing the scheme system parameters, thus the cold molecular can be obtained by the Stark deceleration, and even the higher temperature cold molecular trapping can be realized by selecting suitable system parameters.

关 键 词：原子与分子光学 可控制静电双阱 静电场分布 分子囚禁 

分 类 号：O561[理学—原子与分子物理]