基于Talbot效应的电光调制位相阵列器  

Electro-optic tunable phase array based on Talbot effect

作　　者：张进宏[1] 陈云琳[1] 

机构地区：[1]北京交通大学理学院,北京100044

出　　处：《红外与激光工程》2014年第11期3724-3728,共5页Infrared and Laser Engineering

基　　金：国家自然科学基金(61178052);中央高校基本科研业务费(2011JBM122;2011JBZ013)

摘　　要：利用周期极化反转的铌酸锂晶体设计与制备圆形周期单元六角结构排列的可调位相阵列器,对位相阵列器的Talbot效应光衍射成像进行理论和实验研究,得到了不同位相差和不同分数Talbot距离条件下阵列器近场衍射的理论仿真和实验观测图像,实验结果与理论研究相符。计算衍射场取样区域内平均强度,获得取样区内强度随位相差和Talbot距离变化的曲线,揭示了位相差和衍射位置对阵列器衍射强度分布的影响。The tunable phase array with hexagon﹣lattice and round cell was designed and fabricated by use of periodically poled LiNbO3 crystal. Theoretical and experimental researches on the Talbot effect diffraction of phase array were presented. The simulated and experimental patterns of near field diffraction under various phases different and fraction Talbot distance were obtained. The results of experiment agreed with the results of the theoretical researches well. Average intensity of the selected area in diffraction field was calculated to get the relative intensity curves versus phase difference and distance. The effects on the intensity distribution of near﹣field diffraction from phase difference and Talbot distance were revealed.

关 键 词：位相阵列器 TALBOT效应 铌酸锂 电光效应 

分 类 号：O436[机械工程—光学工程]