基于多场耦合计算的气体绝缘开关设备母线接头过热性故障分析  

Temperature Rise Calculation and Overheating Fault Analysis of Gas Insulated Switchgear Bus Connector Based on Coupled Field Theory

作　　者：孙国霞[1,2] 关向雨 金向朝[1] 谢志杨[1] 舒乃秋[2] 孔令明[2] 

机构地区：[1]广东电网公司佛山供电局,佛山528000 [2]武汉大学电气工程学院,武汉430072

出　　处：《高电压技术》2014年第11期3445-3451,共7页High Voltage Engineering

基　　金：中央高校基本科研业务费专项资金(2012207020208)~~

摘　　要：为了研究气体绝缘开关设备(GIS)母线接头的过热性故障形成机理,基于多场耦合有限元法建立了GIS梅花接头温升计算模型。该模型通过对结构场分析计算触指与导体间的接触电阻(ECR)与接触热阻(TCR),运用电流传导分析计算了功率损失并作为热源代入温度场计算接头温升。进行了稳态电流温升实验,验证了所提出计算模型的有效性。基于该模型分析了导体插入深度与短路负荷电流对GIS母线接头温升的影响,结果表明短路负荷电流由于作用时间短而不会造成母线接头的热损伤,导体对接深度不足引起的接触点异常温升是导致GIS母线接头过热性故障的直接原因。To understand the formation mechanism of overheating fault in bus connector of gas insulated switchgear（GIS）, we developed a 3-D finite element model based on the coupled field theory to calculate the temperature rise in the bus connector. In the model, electrical contact resistance（ECR） and thermal contact resistance（TCR） are calculated based on structural field, and power loss, calculated based on current conduction analysis, is taken as the heat source in connector＇s temperature field for calculating the temperature rise. The model is validated by steady-current temperature-rise tests, and it is adopted for analyzing the influences of conductor insertion depth and short-circuit load current on connector temperature rise. It is concluded that short-circuit current will not thermally damage bus contact due to its short duration, and the depth of the inserting conductor is the direct cause of overheating faults in GIS bus connectors.

关 键 词：耦合场 有限元 梅花接头 GIS 温升计算 过热性故障 

分 类 号：TM595[电气工程—电器]