氧等离子体刻蚀对石墨烯性能的影响  

Investigation of the influence of oxygen-plasma etching on graphene

作　　者：魏芹芹[1] 何建廷[1] 

机构地区：[1]山东理工大学电气与电子工程学院,山东淄博255049

出　　处：《功能材料》2014年第24期24087-24090,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61076069)

摘　　要：对机械剥离在SiO2表面的多层石墨烯进行氧等离子体刻蚀,通过拉曼光谱、原子力显微镜和电学性能表征来研究氧等离子体轰击对石墨烯特性的影响。结果表明氧等离子体轰击会在表层石墨烯中引入大量缺陷,大量缺陷的存在又会诱导对石墨烯的进一步刻蚀,从而实现逐层刻蚀石墨烯。另外,氧等离子体轰击的过程在做了金属电极的石墨烯中引入金属颗粒等其它物质,这几方面的原因最终导致在氧等离子体刻蚀石墨烯的过程中石墨烯的两端电导呈现近似线性的减小,石墨烯出现n型掺杂效应。Exfoliated few layers graphene on silicon oxide were exposed into oxygen-plasma,Raman spectra, Atomic force microscope (AFM)and electrical measurement are used to characterize the influence of oxygen-plasma etching on the properties of graphene.Results show that lots of defects will be introduced to graphene by oxygen-plasma etching,and these defects will act as the initial point for the following etch,and layer by layer etching is realized.In addition,metal particles and organic materials deposition can be introduced during the ox-ygen-plasma etching.All these factors lead to linear decrease of the two-terminal conductance and n-type doping characteristics of graphene.

关 键 词：石墨烯 氧等离子体轰击 缺陷 电学特性 拉曼光谱 

分 类 号：TB34[一般工业技术—材料科学与工程]