抛光铜衬底表面形貌对CVD制备石墨烯的影响  

Morphology effect of polished copper on the graphene quality by CVD

作　　者：冯伟[1,2] 张建华[1] 杨连乔[1] 

机构地区：[1]上海大学新型显示技术及应用集成教育部重点实验室,上海200072 [2]上海大学材料科学与工程学院,上海200072

出　　处：《功能材料》2015年第1期1129-1134,共6页Journal of Functional Materials

基　　金：国家重点基础研究发展计划(973计划)资助项目(2011CB013100)

摘　　要：铜是目前用于化学气相沉淀(CVD)法制备石墨烯应用最广泛的一种催化剂,其表面形貌状态直接影响石墨烯的质量。电化学抛光法是一种处理金属表面形貌的重要方法。系统研究了抛光工艺参数对铜箔表面质量以及相应石墨烯品质的影响,探讨了铜箔表面状态与石墨烯透过率、导电性及石墨烯层数的关联特性。研究发现,抛光处理后铜箔生长的石墨烯的品质较未处理铜箔生长的有明显提高。在一定抛光电流密度范围,抛光电流密度越大,铜箔表面越平整,在抛光处理后的铜箔上生长的石墨烯结晶缺陷态逐渐减少,单层性与均匀性越来越好好,透过率和导电性也显著提高。Copper was a widely used catalyst for graphene synthesis by chemical vapor deposition (CVD),whose surface quality has great influence on the graphene quality.Electrochemical polishing was an important method of pre-treatment of the metal surface morphology.In this paper,we comprehensively discussed the relationship between process parameter of electrochemical polish with surface morphology and graphene quality.It was found that,compared with the graphene grown on the unpolished copper foil,the qualities of the graphene grown on the polished copper foil improved significantly.And,at certain current density range,the surface morphology is in direct ratio with the polishing voltage.Correspondingly the graphene has less defects,better monolayers,transmittance and conductivity.

关 键 词：石墨烯 铜 化学气沉淀法 电化学抛光 

分 类 号：TN304.055[电子电信—物理电子学]