Semimetal NaaBi Thin Film Grown on Double-Layer Graphene by Molecular Beam Epitaxy  

作　　者：文竞 郭画 颜晨晖 王振宇 常凯 邓鹏 张腾 张志东 季帅华 王立莉 何珂 马旭村 陈曦 薛其坤 

机构地区：[1]State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 [2]Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 [3]Institute of Physics, Chinese Academy of Sciences, Beijing 100190

出　　处：《Chinese Physics Letters》2014年第11期130-132,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 11025419 and 50831006, and the National Basic Research Program of China under Grant No 2011CB921904.

摘　　要：Atomically fiat thin films of topological semimetal Na3Bi are grown on double-layer graphene formed on 6H SiC（0001） substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tunneling microscopy and angle resolved photoelectron spectroscopy, the growth conditions for NaaBi thin films on double-layer graphene are successfully established. The band structure of NaaBi grown on graphene is mapped along Г-M and Г-K; directions. Furthermore, the energy band of Na3Bi at higher energy is uncovered by doping Cs atoms on the surface.Atomically fiat thin films of topological semimetal Na3Bi are grown on double-layer graphene formed on 6H SiC（0001） substrates by molecular beam epitaxy. By combined techniques of molecular beam epitaxy, scanning tunneling microscopy and angle resolved photoelectron spectroscopy, the growth conditions for NaaBi thin films on double-layer graphene are successfully established. The band structure of NaaBi grown on graphene is mapped along Г-M and Г-K; directions. Furthermore, the energy band of Na3Bi at higher energy is uncovered by doping Cs atoms on the surface.

分 类 号：TN304.26[电子电信—物理电子学] U463.55[机械工程—车辆工程]