Polarization Induced High A1 Composition A1GaN p-n Junction Grown on Silicon Substrates  

作　　者：张鹏 李世彬 余宏萍 吴志明 陈志 蒋亚东 

出　　处：《Chinese Physics Letters》2014年第11期152-154,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61204098, 61101030 and 61371046, and the Projects of International Cooperation and Exchanges of Sichuan Province under Grant No 2014HH0041.

摘　　要：Wide bandgap Alx Ga1-x N （x = 0.7-1） p-n junction is realized on a silicon substrate through polarization induced doping. Polarization induced positive charge field is produced by linearly grading from A1N to Al0.7Ga0.3N, and negative charge field is generated by an inverted grading from A10.7Ga0.3N to A1N. The polarization charge field induced hole density is on the order of 10^18 cm^-3 in the graded AIxGaI-xN：Be （x = 0.7-1） p-n junction. Polarization doping provides a feasible way to mass produce lll-nitride devices on silicon substrates.Wide bandgap Alx Ga1-x N （x = 0.7-1） p-n junction is realized on a silicon substrate through polarization induced doping. Polarization induced positive charge field is produced by linearly grading from A1N to Al0.7Ga0.3N, and negative charge field is generated by an inverted grading from A10.7Ga0.3N to A1N. The polarization charge field induced hole density is on the order of 10^18 cm^-3 in the graded AIxGaI-xN：Be （x = 0.7-1） p-n junction. Polarization doping provides a feasible way to mass produce lll-nitride devices on silicon substrates.

分 类 号：TN304.23[电子电信—物理电子学] O441[理学—电磁学]