LiF Thickness dependence of Electron Injection Models for Alqa/LiF/A1 Cathode Structure  

作　　者：连加荣 罗皙 陈薇 苏圣勋 赵宏飞 刘斯扬 许桂雯 牛芳芳 曾鹏举 

机构地区：[1]Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen 518060

出　　处：《Chinese Physics Letters》2014年第11期159-162,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61106094 and 20972097, the Natural Science Foundation of Guangdong Province under Grant No S2012020011003, the Foundation for Distinguished Young Talents in Higher Education of Guangdong under Grant No LYM11111, and the Shenzhen Science Foundation under Grant Nos JC201005280458A, JCYJ20130329115524512 and JCYJ20120613162231310.

摘　　要：We present the experimental evidences showing that three different electron injection models play roles in Alq3 based organic light-emitting diodes in sequence when the thickness of LiF interlayer is changed. It is found that the device with a 0.2nm LiF layer displays the largest current with declined luminescence. However, the one with a 0.6 nm LiF layer displays the second largest current and the highest luminescence of all. Combining with the photoluminescent test results, three models, namely chemical reaction at ternary interface, dipole effect at binary interface and tunneling enhancement effect, are expected to play roles in sequence when the LiF thickness is increased from 0 nm to 4 nm.We present the experimental evidences showing that three different electron injection models play roles in Alq3 based organic light-emitting diodes in sequence when the thickness of LiF interlayer is changed. It is found that the device with a 0.2nm LiF layer displays the largest current with declined luminescence. However, the one with a 0.6 nm LiF layer displays the second largest current and the highest luminescence of all. Combining with the photoluminescent test results, three models, namely chemical reaction at ternary interface, dipole effect at binary interface and tunneling enhancement effect, are expected to play roles in sequence when the LiF thickness is increased from 0 nm to 4 nm.

分 类 号：TN383.1[电子电信—物理电子学] TL816.7[核科学技术—核技术及应用]