基于负偏压收集极的绝缘体二次电子发射系数测量  

Secondary Electron Yield Measurement of Insulator Based on Negatively Biased Collector

作　　者：翁明[1] 曹猛[1] 赵红娟[1] 张海波[1] 

机构地区：[1]西安交通大学电子科学与技术系电子物理与器件教育部重点实验室,西安710049

出　　处：《真空科学与技术学报》2014年第11期1262-1266,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金项目(项目批准号11175140);国家重点实验室基金项目(No.9140C530101130C53013)

摘　　要：建立了一个主要由单把脉冲电子枪和一个二次电子收集极构成的测量装置用于室温下绝缘体二次电子发射系数的测量。通过给收集极设定负偏压,本文提出了一种新的电荷中和方法,有效地中和了在测量过程中累积在样品表面的电荷。采用双通道示波器对二次电子电流和样品电流进行了测量,根据相应脉冲电流的峰值确定了样品的二次电子发射系数。成功测量了尼龙样品的二次电子发射系数与一次电子能量的关系曲线,并与文献测量结果进行了比较,结果表明本文的测量装置和测量方法简单易行。A novel technique was developed to rapidly and simply evaluate the secondary electron yield δ of insulator materials in vacuum at room temperature. The newly-developed device,consisting of a single-pulse electron gun and a secondary electron collector,effectively neutralizes the charges,accumulated on the sample surface in the previous measurement,by negatively biasing the collector. The secondary electron current and the sample current are measured with a dual-channel oscilloscope and δ is determined by evaluating the peaks of the pulsed currents involved. As exemplified with a nylon sample,the dependence of the secondary electron yield δ on the primary electron energy was obtained. The measured data were found to agree fairly well with the results reported in literature.

关 键 词：二次电子发射系数 电荷中和 绝缘体 测量 

分 类 号：O462.2[理学—电子物理学]