A novel LDMOS with a junction field plate and a partial N-buried layer  

作　　者：石先龙 罗小蓉 魏杰 谭桥 刘建平 徐青 李鹏程 田瑞超 马达 

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices.University of Electronic Science and Technology of China [2]Science and Technology on Analog Integrated Circuit Laboratory

出　　处：《Chinese Physics B》2014年第12期423-427,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61376079);the Program for New Century Excellent Talents in University of Ministry of Education of China(Grant No.NCET-11-0062);the Postdoctoral Science Foundation of China(Grant Nos.2012T50771 and XM2012004)

摘　　要：A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field plate（JFP） over the drift region and a partial N-buried layer（PNB） in the P-substrate. The JFP not only smoothes the surface electric field（E-field）, but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%,and a reduction in Ron.sp by 45.7% simultaneously.A novel lateral double-diffused metal–oxide semiconductor（LDMOS） with a high breakdown voltage（BV） and low specific on-resistance（Ron.sp） is proposed and investigated by simulation. It features a junction field plate（JFP） over the drift region and a partial N-buried layer（PNB） in the P-substrate. The JFP not only smoothes the surface electric field（E-field）, but also brings in charge compensation between the JFP and the N-drift region, which increases the doping concentration of the N-drift region. The PNB reshapes the equipotential contours, and thus reduces the E-field peak on the drain side and increases that on the source side. Moreover, the PNB extends the depletion width in the substrate by introducing an additional vertical diode, resulting in a significant improvement on the vertical BV. Compared with the conventional LDMOS with the same dimensional parameters, the novel LDMOS has an increase in BV value by 67.4%,and a reduction in Ron.sp by 45.7% simultaneously.

关 键 词：junction field plate partial N-buried layer specific on-resistance breakdown voltage 

分 类 号：TN386[电子电信—物理电子学]