Improved power simulation of AlGaN/GaN HEMT at class-AB operation via an RF drain–source current correction method  

作　　者：林体元 庞磊 袁婷婷 刘新宇 

机构地区：[1]Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences

出　　处：《Chinese Physics B》2014年第12期428-434,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61204086)

摘　　要：A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.A new modified Angelov current–voltage characteristic model equation is proposed to improve the drain–source current（Ids） simulation of an Al Ga N/Ga N-based（gallium nitride） high electron mobility transistor（Al Ga N/Ga N-based HEMT） at high power operation. Since an accurate radio frequency（RF） current simulation is critical for a correct power simulation of the device, in this paper we propose a method of Al Ga N/Ga N high electron mobility transistor（HEMT）nonlinear large-signal model extraction with a supplemental modeling of RF drain–source current as a function of RF input power. The improved results of simulated output power, gain, and power added efficiency（PAE） at class-AB quiescent bias of Vgs =-3.5 V, Vds= 30 V with a frequency of 9.6 GHz are presented.

关 键 词：AlGaN/GaN HEMT RF drain–source current RF dispersion effect power-added efficiency 

分 类 号：TN386[电子电信—物理电子学]