Enhanced light emission from InGaN/GaN quantum wells by using surface plasmonic resonances of silver nanoparticle array  

作　　者：陈湛旭 万巍 张佰君 何影记 金崇君 

机构地区：[1]School of Electronic and Information, Guangdong Polytechnic Normal University [2]State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University

出　　处：《Chinese Physics B》2014年第12期559-563,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.10774195,U0834001,10974263,11174374,11174061,and 10725420);the Key Program of Ministry of Education,China(Grant No.309024);the New Century Excellent Talents in University,the National Basic Research Program of China(Grant No.2010CB923200);the Natural Science Foundation of Guangdong Province,China(Grant No.S2013010015795)

摘　　要：The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence（PL） properties of blue-emitting In Ga N/Ga N quantum wells（QWs） is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance（SPR） near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.The effect of silver nanostructures prepared by nanosphere lithography on the photoluminescence（PL） properties of blue-emitting In Ga N/Ga N quantum wells（QWs） is studied. Arrays of silver nanoparticles are fabricated to yield a collective surface plasmonic resonance（SPR） near to the QWs emission wavelength. A large enhancement in peak PL intensity is observed, when the induced SPR wavelength of the nanoparticles on the QWs sample matches the QWs emission wavelength. The study proves that the SPRs could enhance the light emission efficiency of semiconductor material.

关 键 词：light-emitting devices PHOTOLUMINESCENCE metallic nanoparticle nanosphere lithography 

分 类 号：TN312.8[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]