Tips-PEN薄膜载流子迁移率的稳态SCLC与阻抗谱法测量的研究  

Tips-PEN thin film carrier mobility evaluated by steady-state SCLC and impedance spectroscopy

作　　者：景亚霓[1] 滕支刚 魏志芬 

机构地区：[1]江南大学物联网工程学院,江苏无锡214122 [2]西安电力整流器有限责任公司,陕西西安710077

出　　处：《液晶与显示》2014年第6期1077-1082,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金项目(No.60776056)

摘　　要：利用稳态SCLC法和阻抗谱法测量了由溶液工艺制备的Tips-PEN薄膜的空穴迁移率,并对两种方法的测试结果进行比较和分析。测试样品是p+Si/PEDOT∶PSS/Tips-PEN/Ag构成的单载流子器件。稳态SCLC法测试的器件Tips-PEN厚度为87nm,得到零场迁移率和场依赖因子分别为1.21×10-5 cm2/(V·s)和0.002 4(cm/V)1/2;阻抗谱法测试的器件Tips-PEN厚度为827nm,得到零场迁移率和场依赖因子分别为1.219×10-5 cm2/(V·s)和0.003 47(cm/V)1/2。稳态SCLC法得到的场依赖因子较小,呈现较弱的场依赖关系,其原因是为得到无陷阱模式下的稳态SCLC需要施加的电场远远高于阻抗谱测量时的电场,以至于注入较高的载流子浓度。这一结果显示了在较高载流子浓度下迁移率与场的依赖变弱,与理论模型和模拟预测的趋势一致。The field-dependent hole mobility of Tips-PEN film prepared by solution-process was extracted with steady-state SCLC and impedance spectroscopy method,and the results of the two methods were compared and analyzed.The samples used in this study have a general structure of p＋Si/PEDOT∶PSS/Tips-PEN/Ag,which is a single-carrier device.For Tips-PEN thickness of 87 nm devices,the zero field mobility and the field-dependent factors obtained with steady-state SCLC were1.21×10^-5 cm^2/（V·s）and 0.002 4（cm/V）^1/2,respectively.For thickness of 827 nm device,the zero field mobility and field-dependent factors obtained with impedance spectroscopy were 1.219 ×10^-5 cm^2/（V·s）and 0.003 47（cm/V）^1/2,respectively.The smaller field-dependent factor obtained by steady-state SCLC shows that the mobility is weaker dependent on the field.This is due to muchhigher electric field applied in order to get steady-state free-trap SCLC than that in impedance spectroscopy and then higher carrier concentration is injected.The result shows that there is weaker electric field dependence of mobility in higher carrier concentration and is consistent with theoretical model and simulation.

关 键 词：Tips-Pentacene 空间电荷限制电流 阻抗谱 迁移率 

分 类 号：TN311.5[电子电信—物理电子学]