Physics of Power Semiconductor Streamer Laser  

作　　者：Valentin V. Parashchuk 

机构地区：[1]Stepanov Institute of Physics, NationaI Academy of Sciences of the Belarus, Minsk 220072, Belarus

出　　处：《Journal of Physical Science and Application》2014年第6期398-402,共5页物理科学与应用（英文版）

摘　　要：It is considered the mechanism of streamer discharge in the wide-gap semiconductors as a highly effective method of the laser excitation on the basis of representation about the phenomenon of light self-trapping of the discharge, providing their high propagation velocity down to v- 5 ×10^9 sm/s, the crystallographic orientation, filamentary character at thickness of the channel about 1 μm and absence of destructions of a crystal.

关 键 词：Power semiconductor lasers pumping by streamer discharge effect of light auto-channelling （self-trapping） n2 〉 0 and n4〈 0 nonlinearity combined n2 ＋ n4 effect symmetry of crystallographic directions system of streamer discharges. 

分 类 号：TN248.4[电子电信—物理电子学] O43[机械工程—光学工程]