On the MOSFET-Based Temperature Sensitive Element for Bolometer Application  

作　　者：Etienne Fuxa Jean-Jacques Yon Jalal Jomaah 

机构地区：[1]Bolometer Research Group (LIB), DOPT (Department of Optics & Photonics), CEA (Alternative Energies and Atomic EnergyCommission) LETI, Grenoble 38000, France [2]LAHC (Laboratory of Hyperfrequencies and Characterization), IMEP (Mieroelectronics, Electromagnetism and PhotonicsInstitute), Grenoble 38000, France

出　　处：《Journal of Earth Science and Engineering》2014年第8期464-469,共6页地球科学与工程（英文版）

摘　　要：This paper focuses on the study of thermal performances of MOS （metal-oxide-semiconductor） transistors for uncooled infrared bolometer applications. Such devices can be used in various applications both military and civil, such as defence and security, medical applications, industrial surveillance, etc. Series of measurements were conducted to obtain TCC （temperature coefficient of current） versus gate voltage and temperature curves. The TCC is a figure of merit for a device used as the sensitive element in a bolometer that represents its sensitivity to temperature and as such is a good indicator of the detector attainable performance. The measurements were confronted to Atlas simulations, and showed that in the subthreshold region the TCC ranges from 4%/K all the way to 9%/K which represents a great improvement compared to state of the art thermistor bolometers. Analytic expressions of the TCC are also derived from current equations of the MOSFET （MOS field effect transistor） drain current to help understanding the effect of drain to source voltage, mobility, temperature and threshold voltage sensibility to temperature, in all three operation modes of the transistor （subthreshold, ohmic and saturation）. It was also determined that gate length does not have an influence on the TCC until short channel effects are factored in.

关 键 词：BOLOMETER uncooled infrared detection MOSFET. 

分 类 号：TN386.1[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]