Modeling,fabrication and measurement of a novel CMOS UV/blue-extended photodiode  

作　　者：陈长平 赵永嘉 周晓亚 金湘亮 杨红姣 罗均 

机构地区：[1]Faculty of Materials, Optoelectronics and Physics, Xiangtan University [2]School of Mechatronic Engineering and Automation, Shanghai University

出　　处：《Journal of Central South University》2014年第10期3821-3827,共7页中南大学学报（英文版）

基　　金：Projects(61233010,61274043)supported by the National Natural Science Foundation of China;Project(NCET-11-0975)supported by the Program for New Century Excellent Talents in University,China

摘　　要：A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P+ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.A new complementary metal oxide semiconductor UV/blue-extended photodiode was presented for light detection in the UV/blue spectral range. Photoelectric characteristics of this presented photodiode were studied by numerical modeling and device simulation. Technology computer aided design simulation was done first to analyze its photoelectric characteristics. The structure characteristic and depletion situation of space between two adjacent P^＋ anodes were discussed. The reverse characteristic, spectral response characteristic and DC characteristic were discussed in detail. For the numerical modeling, dead layer effect is considered in the building of analytical mode. Dead layer is a space in which the boron doping profile decreases towards the surface due to high doping effects and boron redistribution, which affects the sensitivity of photodiode in the UV range seriously. Reverse characteristics and spectral response characteristics were modeled and analyzed typically. At last, silicon test results were given and compared with the simulated result, which shows reasonable match for each.

关 键 词：device simulation numerical modeling ultraviolet responsivity photoelectric characteristics avalanche breakdown voltage silicon 

分 类 号：TN364.2[电子电信—物理电子学] X703[环境科学与工程—环境工程]