非极性GaN薄膜与器件的研究进展  

Research Progress of Non-polar GaN Films and Devices

作　　者：孙孪鸿 徐家跃[1] 邹军[1] 王凤超[1] 

机构地区：[1]上海应用技术学院,上海201418

出　　处：《硅酸盐通报》2014年第10期2552-2557,2571,共7页Bulletin of the Chinese Ceramic Society

摘　　要：在传统的衬底上生长出的GaN都是沿着极性轴c轴方向的,非极性GaN薄膜克服了极性薄膜中因为产生内建电场而带来的发光效率和结晶质量的问题。本文主要介绍了非极性GaN薄膜的结构特性、薄膜的制备方法、不同衬底上生长非极性GaN薄膜的研究进展及其器件应用。GaN deposited on traditional substrates are in the polar c direction,non-polar GaN thin films overcomed the problem about luminous efficiency and crystalline quality which are caused by internal electrostatic field. This review mainly focuses on the structure characteristics,preparation methods of non-polar GaN thin film,it also describe the progress and device applications of non-polar GaN thin film deposited on various substrates.

关 键 词：非极性GaN 蓝宝石 同质外延 GaN基器件 

分 类 号：O484[理学—固体物理]