太阳电池器件参数提取的一种简单方法  

A SIMPLE METHOD FOR THE EXTRACTION OF THE DEVICE PARAMETERS OF SOLAR CELLS

作　　者：欧阳良琦 庄大明[1] 刘江[1] 曹明杰[1] 郭力[1] 

机构地区：[1]清华大学材料学院,先进成形制造教育部重点实验室,北京100084

出　　处：《太阳能学报》2014年第11期2093-2097,共5页Acta Energiae Solaris Sinica

基　　金：清华大学自主研究计划(2010Z08113)

摘　　要：为了较为简洁高效准确地获得串联电阻R_s、并联电阻R_(sh)、品质因子m、反向饱和电流J_0和光生电流J_(ph)等器件参数,提出一种利用太阳电池伏安特性曲线(J-V曲线)提取这些器件参数的简单方法。利用实验制备的几组铜铟镓硒(CIGS)太阳电池的J-V曲线数据进行实例器件参数提取,并验证该方法具有的较高的准确性。此外,还将这几组铜铟镓硒太阳电池和国外高效率铜铟镓硒太阳电池进行对比,发现电池之间效率相差较大的原因。In order to obtain these device parameters series resistance Rs, shunt resistance Rsh, ideality factor m, reversed saturation current J0 and photocurrent Jph easily, efficiently and accurately, in this paper a simple method based on the J-V curve of the solar cells is proposed. Using the J-V curves of the CIGS solar cells fabricated in our laboratory, some examples of the device parameters extraction are given, the accurateness of this method is also verified in this paper. A comparison between the CIGS solar cells fabricated in our laboratory and some high efficient ones abroad is executed, and the reason of the difference in the efficiency is found afterwards.

关 键 词：太阳电池 器件参数提取 拟合方法 

分 类 号：TM615[电气工程—电力系统及自动化]