应变(001)p型金属氧化物半导体反型层空穴量子化与电导率有效质量  

Hole quantization and conductivity effective mass of the inversion layer in(001) strained p-channel metal-oxid-semiconductor

作　　者：刘伟峰[1] 宋建军[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安710071

出　　处：《物理学报》2014年第23期428-433,共6页Acta Physica Sinica

基　　金：教育部博士点基金(批准号:JY0300122503);陕西省自然科学基础研究计划(批准号:2014JQ8329)资助的课题~~

摘　　要：基于k·p微扰理论框架,研究建立了单轴张/压应变Si,Si基双轴应变p型金属氧化物半导体(PMOS)反型层空穴量子化有效质量与空穴面内电导率有效质量模型.结果表明:对于单轴应力PMOS,选择单轴压应力可有效增强器件的性能;同等增强PMOS空穴迁移率,需要施加的单轴力强度小于双轴力的强度;在选择双轴应力增强器件性能时,应优先选择应变Si1-x Ge x作为沟道材料.所获得的量化理论结论可为Si基及其他应变器件的物理理解及设计提供重要理论参考.Within the framework of k·p perturbation theory, models of the hole quantization and conductivity effective mass for the inversion layer in uniaxially tensile/compressive and Si-based baixially strained p-channel metal-oxid-semiconductor（PMOS） have been established. Results show that： 1） uniaxially compressive technique should be chosen for the carrier mobility enhancement in uniaxially strained PMOS; 2） the magnitude of uniaxial stress will be less than that of the biaxial case to improve PMOS performance using strained technique; 3） strained Si1-x Ge x is preferred to use instead of using strained Si, when we choose the biaxially strained materials for the PMOS channel. Our results can provide valuable references to Si-based and other strained device and materials design.

关 键 词：应变 p型金属氧化物半导体 沟道 设计 

分 类 号：TN304.2[电子电信—物理电子学]