基于横向多晶硅二极管的CMOS兼容热风速计  

CMOS compatible thermal anemometer based on laterally polysilicon diodes

作　　者：秦明[1] 黄庆安[1] 

机构地区：[1]东南大学微电子机械系统教育部重点实验室,南京210096

出　　处：《东南大学学报（自然科学版）》2002年第4期569-571,共3页Journal of Southeast University：Natural Science Edition

基　　金：江苏省高新技术资助项目 (BG2 0 0 10 3 5 )

摘　　要：提出并试制了一种采用多晶硅横向二极管作为测温元件的CMOS兼容热风速计 .该风速计的加热元件和测温元件均采用多晶硅技术制造 ,工艺与CMOS兼容 .对横向多晶硅二极管的温度敏感特性调查发现 ,其正向电流随温度增加几乎呈线性增加 ,显示该多晶硅二极管具有负的电压温度系数 .其值约为 - 1 .8mV/K ,非常接近单晶硅上PN结的电压温度系数 - 2mV/K .采用CMOS工艺试制了由 8个横向多晶硅二极管组成的风速计结构 。A new micromachined thermal anemometer based on laterally polysilicon diode (LPD) has been developed. The LPD and temperature sensing elements are fabricated with polysilicon, and the process is compatible with CMOS. The temperature-sensing characterization was investigated. The measured results show that the forward current increases with temperature almost linearly, which means that the LPD has negative bias temperature coefficient. The bias temperature coefficient is about - 1.8 mV/K, which is quite close to that of crystalline silicon diode - 2 mV/K. Furthermore, an anemometer with a ring-like polysilicon heater and 8 LPD temperature-sensing and wind elements was fabricated by CMOS process and its wind rate and wind direction sensing characteristics were measured.

关 键 词：CMOS兼容热风速计 横向多晶硅二极管 风速 风向 结构 制备 

分 类 号：TH765.4[机械工程—仪器科学与技术] TN37[机械工程—精密仪器及机械]