Development of large-area quadrant silicon detector for charged particles  

作　　者：包鹏飞 林承键 杨峰 郭昭乔 郭天舒 杨磊 孙立杰 贾会明 徐新星 马南茹 张焕乔 刘祖华 

机构地区：[1]China Institute of Atomic Energy [2]Beijing Kelixing Photoelectric Technology Co.Ltd

出　　处：《Chinese Physics C》2014年第12期33-38,共6页中国物理C（英文版）

基　　金：Supported by National Basic Research Program of China(2013CB834404);National Natural Science Foundation of China(10727505,10735100,11375268)

摘　　要：The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area.The leakage current under the full depletion bias voltage of-16 V is about 2.5 n A, and the rise time is better than160 ns. The energy resolution for a 5.157 Me V α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region.Such an event is only about 0.6% of all events and can be neglected in an actual application.The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area.The leakage current under the full depletion bias voltage of-16 V is about 2.5 n A, and the rise time is better than160 ns. The energy resolution for a 5.157 Me V α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region.Such an event is only about 0.6% of all events and can be neglected in an actual application.

关 键 词：quadrant silicon detector passivated implanted planar silicon energy resolution charge sharing effect 

分 类 号：TL814[核科学技术—核技术及应用]