利用双发光层结构提高N-BDAVBi掺杂器件的效率  

Using Double Emission Layers Structure to Improve the Efficiency of N-BDAVBi Doped Devices

作　　者：王福军[1] 汪津[1] 张会萍[1] 姜文龙[1] 

机构地区：[1]吉林师范大学信息技术学院,吉林四平136000

出　　处：《吉林师范大学学报（自然科学版）》2014年第4期32-35,共4页Journal of Jilin Normal University:Natural Science Edition

基　　金：吉林省科技发展项目(20100510;20101512;201215221);吉林省教育厅"十二五"科学技术研究项目(2011154;2012175;2012176;2013208)

摘　　要：制备了基于N-BDAVBi的高效率双发光层蓝色有机电致发光器件(OLED),器件中将蓝色荧光染料NBDAVBi作为客体发光材料分别掺入主体材料TCTA和TPBi中,器件结构为ITO/m-MTDATA(40 nm)/NPB(10nm)/TCTA:N-BDAVBi(15 nm)/TPBi:N-BDAVBi(15 nm)/TPBi(30 nm)/LiF(0.6 nm)/Al(150 nm),最大电流效率达到8.44 cd/A,CIE色坐标为(0.176,0.314),并且在12 V的电压下,亮度最大达到11 860 cd/m2,分别是单发光层结构器件的1.85倍和1.2倍.器件性能提高主要归因于双发光层扩大了载流子复合区域,主客体间的Forster能量转移.The high-efficiency and double emitting layers blue light emitting devices was fabricated in the paper. In this device,blue fluorescent material N-BDAVBi was guest which was doped into two host material of TCTA and TPBi. The device structure included indium tin oxide glass（ITO）/ m-MTDATA（40 nm）/ NPB（10 nm）/TCTA：N-BDAVBi（15 nm）/ TPBi：N-BDAVBi（15 nm）/ TPBi（30 nm）/ LiF（0. 6 nm）/ Al（150 nm）. The maximum luminance efficiency was 8. 44 cd / A,which was 1. 85 times and 1. 2 times of the single light-emitting layer structure devices. CIE colour was（0. 176,0. 314）. The maximum luminance of more than 20 620 cd / m2 had been achieved at 12 V. The reason of high capability was the expansion of the recombination zone in double emission layers structure,and fully Forster energy transfer in blue OLEDs.

关 键 词：双发光层 效率 有机电致发光器件 

分 类 号：TN383.1[电子电信—物理电子学]