基于IGBT芯片疲劳机理的关断时间可靠性模型  

Reliability Model of Turn-off time Based on Chip Fatigue Mechanism of IGBT

作　　者：孙俊忠[1] 刘宾礼[2] 

机构地区：[1]海军潜艇学院,动力操纵系,山东青岛266071 [2]海军工程大学,舰船综合电力技术国防科技重点实验室,湖北武汉430033

出　　处：《电力电子技术》2014年第11期73-76,共4页Power Electronics

基　　金：国家自然科学基金(51277178);国家重点基研究发展计划973项目(2013CB035601)~~

摘　　要：基于绝缘栅双极型晶体管(IGBT)芯片疲劳机理,提出采用关断时间对IGBT健康状态进行监控的可靠性评估方法。采用理论分析与解析描述相结合的方法,建立了IGBT关断电流下降时间模型,进而通过研究IGBT关断时间特征量疲劳机理,建立了IGBT关断时间可靠性评估模型。仿真和实验验证了该模型的正确性与准确性。通过该模型可对IGBT的健康状况进行准确评估。Based on the chip fatigue mechanism of insulated gate bipolar transistor（IGBT）,it is put forward that the reliability evaluation method of turn-off time against health monitoring.The fall time model of IGBT turn-off current is established with the combined method of theoretical analysis and analytical description,and the reliability model of turn-off time is established through the research of turn-off time fatigue mechanism.Simulation and experimental results verify the lightness and accuracy of the model.It is significant for the accurate evaluation of IGBT health.

关 键 词：绝缘栅双极型晶体管 疲劳机理 关断时间 可靠性模型 

分 类 号：TN32[电子电信—物理电子学]