红外增透膜研究  

IR Antireflection Coating

作　　者：孙可祥 杨伟声[2] 

机构地区：[1]云南北方驰宏光电有限公司,云南昆明650114 [2]北方夜视科技集团有限公司,云南昆明650223

出　　处：《云光技术》2014年第2期6-18,共13页

摘　　要：在8～12μm红外范围内Ge基底上设计和制备的一面宽带减反膜和一面介质＋DLC膜。薄膜材料Ge、ZnS和YF3由电子束沉积法制得，DLC膜由PEVCD制得。阐述了利用非均匀膜理论设计红外减反射薄膜的方法，所设计的红外减反射膜膜系优化结果较为理想。经过研究分析我们选择了氟化钇来进行此项研究并加以RF源（射频源）辅助镀膜，并用计算机修正来矫正真空镀膜法生产宽带增透膜时实验值与理论值存在的偏差。取得了良好的效果。用沈科仪镀膜机采用PECVD镀制DLC膜方面的也有很好的效果。Broadband Antireflection Coating are designed and manufactured on Ge substrates in 8-12 μm IR range and DLC coating. The Thin-film materials Ge, ZnS and YF3 are produced by electron-beam deposition. A method of designing IR antireflection coating using the theory of inhomogeneous coating was presented. The film designed has been proves the result of optimization is perfect. We choose yttrium fluoride for this research and coating is assistant of RF source after study and analysis, and use computer-aided design, a method to correct the deviation between theory and experiment data when a Broad-band anti-reflective coating was manufactured with vacuum coating process. The method gets a good result. It is a good result in PECVD machine of Shenyang scientific instrument Co., Ltd.

关 键 词：红外增透膜 电子束沉积法 DLC膜 非均匀膜系 

分 类 号：TN214[电子电信—物理电子学]