熔盐电沉积过程温度对1.6Si无取向硅钢Si扩散的影响  

Effect of Temperature on Diffusion of Si in 1.6Si Non-Oriented Silicon Steel during Molten Salt Electro-Deposit Process

作　　者：李慧[1] 梁精龙[1] 赵晓萍[2] 李运刚[1] 张芬萍[1] 

机构地区：[1]河北联合大学冶金与能源学院现代冶金技术教育部重点实验室,唐山063009 [2]河北工业职业技术学院,石家庄050000

出　　处：《特殊钢》2014年第6期12-14,共3页Special Steel

基　　金：国家自然科学基金资助(51274082;51401075)

摘　　要：试验了通过NaCl-KCl-NaF-SiO_2熔盐在电流密度50 mA/cm^2、电沉积脉冲电流正反向比9:1和750~850℃60min电沉积下阴极(/mm)20×20×0.5的1.6Si无取向冷轧硅钢片断面层硅的分布,并通过计算得出Si的扩散系数。结果表明,电沉积温度由750℃提高至850℃时,试样中Si含量增加,扩散的深度由18μm提高到40μm;电沉积温度与Si在钢中的扩散系数近似符合Arrhenius指数关系。The distribution of silicon at cross section of cathode （/mm） 20 × 20×0. 5 sheet of 1.6Si non-oriented cold rolled silicon steel after electro-deposit treatment by NaCl-KCl-NaF-SiO2 molten salt with current intensity 50 mA/ cm2 , electro-deposit pulse current positive-negative ratio 9：1 at 750 - 850℃ for 60min has been tested and the diffusion coefficient of Si is obtained by calculation. Results show that with increasing electro-deposit temperature from 750 ℃ to 850℃, the Si content in sample increases and the diffusion depth increases from 18 μm to 40 μm; the relation between electrodeposit temperature and diffusion coefficient of Si in steel is similar to Arrhenius exponential relationship.

关 键 词：无取向硅钢 电沉积 温度 硅 扩散系数 

分 类 号：TG111.6[金属学及工艺—物理冶金]