X射线衍射形貌术在碲锌镉晶体中的应用  

Application of X-ray diffraction topography in the CdZnTe single crystals

作　　者：孙士文[1] 隋淞印 何力[1] 周昌鹤[1] 虞慧娴[1] 徐超[1] 

机构地区：[1]中国科学院红外成像材料与器件重点实验室,上海200083

出　　处：《激光与红外》2014年第11期1216-1219,共4页Laser & Infrared

基　　金：国家自然科学基金项目(No.60606026)资助

摘　　要：碲锌镉晶体中存在着各种典型晶体缺陷,X射线衍射形貌术是一种非破坏性地整体研究晶体材料结构完整性、均匀性的有效方法。本文将反射式X射线衍射形貌术应用于碲锌镉晶体质量的评价,研究了入射线狭缝宽度、积分时间、扫描步长等测试参数以及样品表面加工状态对X射线衍射形貌的影响。结果表明入射线狭缝宽度对碲锌镉晶体的X射线衍射成像及晶体质量筛选应用影响很大,积分时间、样品扫描步长等测试参数的选择与入射线狭缝宽度密切相关。Many kinds of typical crystal defects can be observed in the Cadmium Zinc Telluride （CdZnTe） single crystals. X-ray diffraction topography is a powerful method for the investigation of structural integrity and homogeneity of single crystals. In this paper, reflection X-ray diffraction topography is applied to evaluate the quality of CdZnTe single crystals. The effect of the factors of incident beam slit, exposure time, scanning step and surface roughness on the X-ray diffraction topography are studied. Results show that the incident beam slit is the most important factor to the X-ray diffraction topography of defects, which is also closely related to the application of screening substrates by crystal aualitv. The narameters of exposure time and seanninz sten are closely related to the incident beam slit.

关 键 词：X射线衍射形貌术 X光貌相 碲锌镉 晶体缺陷 

分 类 号：TN213[电子电信—物理电子学]