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出 处:《Chinese Science Bulletin》2014年第36期5191-5193,共3页
基 金:supported by the National Natural Science Foundation of China(11234005,51332001,and51221291);the National Basic Research Program of China(2009CB623303)
摘 要:A uniaxial magnetic anisotropy Co film was grown on a single-crystal Ba Ti O3(BTO) substrate. The strain yielded by the voltage-induced ferroelastic domain switching in the BTO substrate was recorded by atomic force microscope and modulated the magnetism of the Co film. The manipulation of the magnetism of the Co film is experimentally demonstrated by voltage dependence of magnetic hysteresis loops measured via magneto-optic Kerr effect.A uniaxial magnetic anisotropy Co film was grown on a single-crystal Ba Ti O3(BTO) substrate. The strain yielded by the voltage-induced ferroelastic domain switching in the BTO substrate was recorded by atomic force microscope and modulated the magnetism of the Co film. The manipulation of the magnetism of the Co film is experimentally demonstrated by voltage dependence of magnetic hysteresis loops measured via magneto-optic Kerr effect.
关 键 词:磁各向异性 应变诱导 调制 钛酸钡 电压依赖性 复合 原子力显微镜 磁光克尔效应
分 类 号:TB333[一般工业技术—材料科学与工程]
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