A Multiple Resonant Mode Film Bulk Acoustic Resonator Based on Silicon-on-Insulator Structures  

作　　者：陈晓 杨轶 蔡华林 周长见 Mohammad Ali MOHAMMAD 任天令 

机构地区：[1]Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084 [2]Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong

出　　处：《Chinese Physics Letters》2014年第12期70-73,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 61025021, 61434001, and 61020106006, the National Key Project of Science and Technology of China under Grant No 2011ZX02403-002, the Special Fund for Agroscientific Research in the Public Interest of China under Grant No 201303107, and the Postdoctoral Fellowship Program of the Natural Sciences and Engineering Research Council of Canada.

摘　　要：With the rapid development of wireless technol- ogy, the demand for integrating multi-band devices has spurred substantial research interest. Research on CMOS compatible radio-frequency （rf） devices has also attracted significant attention. The resonant frequency of film bulk acoustic resonators （FBARs） is mainly determined by the thickness of the piezo- electric film, complicating the integration of differ- ent frequencies on a single chip. One report real- ized multiple resonant frequencies around 2.0 GHz by changing the quality of the electrode. Another re- port obtained the 2.5 GHz main frequency response with a quality factor （Q） of 101.8 and some spuri- ous resonances, while these spurious resonances were irregular.With the rapid development of wireless technol- ogy, the demand for integrating multi-band devices has spurred substantial research interest. Research on CMOS compatible radio-frequency （rf） devices has also attracted significant attention. The resonant frequency of film bulk acoustic resonators （FBARs） is mainly determined by the thickness of the piezo- electric film, complicating the integration of differ- ent frequencies on a single chip. One report real- ized multiple resonant frequencies around 2.0 GHz by changing the quality of the electrode. Another re- port obtained the 2.5 GHz main frequency response with a quality factor （Q） of 101.8 and some spuri- ous resonances, while these spurious resonances were irregular.

分 类 号：TN751.2[电子电信—电路与系统] TN65