Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer  

作　　者：周旭亮 潘教青 于红艳 李士颜 王宝军 边静 王圩 

机构地区：[1]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

出　　处：《Chinese Physics Letters》2014年第12期138-142,共5页中国物理快报（英文版）

摘　　要：In the last two decades, m-v compound semi- conductor materials grown on elemental semiconduc- tor substrates have attracted much attention due to their potential applications in high-efficiency so- lar cells, photodetectors, quantum-dot （QD） lasers, and metal-oxide-semiconductor field-effect transistors （MOSFETs）. Due to their extremely high electron mobility, III-V semiconductors such as GaAs, InGaAs and InAs are believed to be chan- nel materials for future complementary metal-oxide- semiconductor （CMOS） technology.CMOS tran- sistors on Ge substrates with high mobility In- GaAs/Ge channels have already been fabricated by using a wafer bonding technique, which is a promis- ing step for such a device on Si.In the last two decades, m-v compound semi- conductor materials grown on elemental semiconduc- tor substrates have attracted much attention due to their potential applications in high-efficiency so- lar cells, photodetectors, quantum-dot （QD） lasers, and metal-oxide-semiconductor field-effect transistors （MOSFETs）. Due to their extremely high electron mobility, III-V semiconductors such as GaAs, InGaAs and InAs are believed to be chan- nel materials for future complementary metal-oxide- semiconductor （CMOS） technology.CMOS tran- sistors on Ge substrates with high mobility In- GaAs/Ge channels have already been fabricated by using a wafer bonding technique, which is a promis- ing step for such a device on Si.

分 类 号：TN304.2[电子电信—物理电子学] TN304.23