原子自旋磁强计磁屏蔽筒参数优化设计  

Parameter optimization design of magnetic shielding cylinders for atomic spin magnetometer

作　　者：张红[1] 陈熙源[1] 邹升[1] 

机构地区：[1]东南大学微惯性仪表与先进导航技术教育部重点实验室,南京210096

出　　处：《东南大学学报（自然科学版）》2014年第6期1177-1180,共4页Journal of Southeast University：Natural Science Edition

基　　金：国家自然科学基金资助项目(51375087);中央高校基本科研业务费专项资金资助项目(CXLX13_083);高等学校博士学科点专项科研基金资助项目(20110092110039)

摘　　要：为解决磁屏蔽筒制约原子自旋磁强计灵敏度的问题,通过改进多层磁屏蔽筒轴向系数公式获得磁屏蔽筒参数优化模型,并在仅改变一项参数而其他参数固定的条件下,依据优化模型,利用Matlab软件对各参数对轴向屏蔽系数的影响程度进行仿真.结果表明:随着最内层筒半径、筒长及径向层间距的增大,轴向屏蔽系数迅速减小;轴向间隙越大,则屏蔽系数越大.根据仿真结果及实际应用需要优化设计磁屏蔽筒参数,并利用Ansoft软件对优化筒和非优化筒的屏蔽效果进行仿真.结果表明,在外界磁场相同的情况下,未优化和经优化设计的磁屏蔽筒屏蔽能效分别约为152.1和158.6 d B.因此,通过参数优化模型可获得体积小、质量轻、成本低、屏蔽性能大的磁屏蔽筒.To solve the problem that the sensitivity of atomic spin magnetometer is restricted by mag-netic shielding cylinders,the parameter optimization models of magnetic shielding cylinders are de-signed by improving the axial coefficient formula of multilayered magnetic shielding cylinders.With the change of one parameter while the others keep fixed,according to the optimization models,the influences of parameters on the axial shielding factor are simulated by using Matlab software.The simulation results show that with the increase of the innermost radius,innermost length and radial gap,the axial shielding factor decreases quickly.The larger the axial clearance,the greater the shielding factor.According to the simulation results and the practical application needs,the parame-ters of magnetic shielding cylinders are optimized.The comparison of the shielding effects between the non-optimized and optimized magnetic shielding cylinders is carried out by Ansoft software.The results show that under the same external magnetic field,the shielding effectiveness of the non-opti-mized and optimized magnetic shielding cylinders are about 152.1 and 158.6 dB,respectively. Therefore,by the parameter optimization models,the magnetic shielding cylinders with small size, light weight,low cost,and great performance can be obtained.

关 键 词：原子自旋磁强计 磁屏蔽 参数优化 ANSOFT 屏蔽效能 

分 类 号：O441.2[理学—电磁学]