表面等离子体提高GaN-LED发光效率的研究进展  

Research Progress of Surface Plasmon Enhanced Luminescence Efficiency of Ga N-Based LED

作　　者：刘春影[1] 苗长云[1] 刘宏伟[1] 杨华[1] 李晓云[1] 牛萍娟[1] 

机构地区：[1]天津工业大学电子与信息工程学院,天津300387

出　　处：《半导体技术》2014年第12期881-887,共7页Semiconductor Technology

基　　金：国家自然科学青年基金资助项目(11404239);天津市自然科学基金资助项目(14JCQNJC01000)

摘　　要：表面等离子体能够增强氮化镓发光二极管的发光效率,为高效发光二极管芯片的研究提供了可行的方案。近年来,国内外研究小组在利用表面等离子体增强氮化镓发光二极管发光效率的实验中,取得了很多有价值的结果。介绍了具有金属薄膜、金属颗粒和金属光子晶体等典型结构的氮化镓发光二极管。重点探讨了表面等离子体增强发光二极管发光的机理、结构和关键技术。对具有二维金属光子晶体的氮化镓发光二极管发光增强机理进行了分析和预测,认为利用二维光子晶体可以从内量子效率和外量子效率两方面增强器件发光,并且有很好的可控制性,是提高发光效率的可行方案。Surface plasmon can enhance the luminescence efficiency of GaN-based light-emitting diode （GaN-LED）, which provides a feasible method for the research of high quality light-emitting diode. In recent years, experiments of surface plasmon enhanced the light emisson efficiency of GaN-LED are carried out by many domestic and international research groups, and some valuable experimental data are obtained. The GaN-LEDs with the typical structure of metal film, metal nanoparticles and metal photonic crystals are summarized. The theory, structure and key techniques of the surface plasmon enhanced luminescence efficiency of the LED are mainly discussed. The light emitting enhancement mechanism of GaN-LED with two-dimensional metal photonic crystal is analyzed and forecasted. Two-dimensional metal photonic crystal in GaN-LED can enhance both internal quantum efficiency and external quantum efficiency, and has good controllability. The two-dimensional photonic cystal should be an effective method to enhance LED efficiency in future research.

关 键 词：氮化镓发光二极管 表面等离子体 内量子效率 光提取 发光效率 

分 类 号：TN312.8[电子电信—物理电子学]